Comprehensive TDDB lifetime prediction methodology for intrinsic and extrinsic failures in Cu interconnect dielectrics

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• 作者：N. Suzumura ; ^{naohito.suzumura.zn@renesas.com} ; M. Ogasawara ; K. Makabe ; T. Kamoshima ; T. Ouchi ; T. Furusawa ; E. Murakami
• 关键词：Time-dependent dielectric breakdown (TDDB) ; Lifetime prediction ; Cu/low-k ; Field acceleration model ; Thinning model ; Critical area analysis (CAA)
• 刊名：Microelectronic Engineering
• 出版年：2013
• 出版时间：June, 2013
• 年：2013
• 卷：106
• 期：Complete
• 页码：200-204
• 全文大小：944 K

文摘

This paper presents a comprehensive lifetime prediction methodology for both intrinsic and extrinsic Time-dependent dielectric breakdown (TDDB) failures to provide adequate Design-for-Reliability. For intrinsic failures, it is found that the ¡ÌE model is suitable for the field acceleration model from long-term TDDB tests. By applying the ¡ÌE model and estimating the Weibull slope using dedicated single-via test structures, we effectively prevent lifetime underestimation, therefore relaxing design restrictions. For extrinsic failures, by applying the thinning model and Critical area analysis (CAA) it is possible to predict extrinsic failure of breakdown voltage and lifetime only from hard-short defect densities, and we can quantify the failure probabilities for any design layouts of various LSI products.