Cu(In,Ga)S<sub>2</sub> absorber layer prepared for thin film solar cell by electrodeposition of Cu-Ga precursor from deep eutectic solvent

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Cu(In,Ga)S₂ absorber layer prepared for thin film solar cell by electrodeposition of Cu-Ga precursor from deep eutectic solvent

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作者：Zhou Cao^a ; ^b ; Sui Yang^a ; ^b ; ^{syang@xtu.edu.cn" class="auth_mail" title="E-mail the corresponding author} ; Mang Wang^c ; Xiaopan Huang^c ; Hongxing Li^a ; ^b ; Jie Yi^c ; Jianxin Zhong^a ; ^b
关键词：Electrochemical deposition ; Deep eutectic solvent ; Cu(In ; Ga)S2 thin film ; Solar cell
刊名：Solar Energy
出版年：2016
出版时间：1 December 2016
年：2016
卷：139
期：Complete
页码：29-35
全文大小：1754 K

文摘

•: The electrodeposition carried out in DES to eliminate the interference of HER.
•: A novel technique for synthesis of CIGS thin film is presented.
•: The influence of deposition potential on the properties of the films is investigated.

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