Three-step vapor Se/N<sub>2</sub>/vapor Se reaction of electrodeposited Cu/In/Ga precursor for preparing CuInGaSe<sub>2</sub> thin films

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Three-step vapor Se/N₂/vapor Se reaction of electrodeposited Cu/In/Ga precursor for preparing CuInGaSe₂ thin films

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作者：Jinlian Bi^a ; Jianping Ao^a ; ^{Aojp@nankai.edu.cn" class="auth_mail" title="E-mail the corresponding author} ; Ming-Jer Jeng^b ; ^c ; Liyong Yao^a ; Shoushuai Gao^a ; Guozhong Sun^a ; Qing He^a ; Zhiqiang Zhou^a ; Yun Sun^a ; Yu-Ling Xiao^b ; Liann-Be Chang^b ; ^c
关键词：Cu(In ; Ga)Se2 ; Electrodeposition ; Selenization ; Solar cell
刊名：Solar Energy Materials and Solar Cells
出版年：2017
出版时间：January 2017
年：2017
卷：159
期：Complete
页码：352-361
全文大小：3830 K

文摘

•: Solid Se source is used to provide Se atmosphere for selenizing Cu/In/Ga precursors.
•: Three-step reaction has been used to solve the common issue of Ga accumulation.
•: Selenization without CuGaSe₂ phase formation in the first step favors the Ga diffusion.
•: Ga re-diffusion and significant grain growth happened during the second step.

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