Temperature-dependent facet development in the deposition of GaInP on non-planar surfaces

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• 作者：Bastos ; P.L. ; Anders ; M.J. ; Schermer ; J.J. ; Giling ; L.J. ; Bongers ; M.M.G.
• 关键词：Alloys ; Chemical vapor deposition ; Computer simulations ; Epitaxy ; Faceting ; Phosphine ; Scanning electron microscopy (SEM) ; Semiconducting films ; Semiconducting surfaces ; Semiconductor-semiconductor thin film structures ; Single crystal epitaxy ; Solid-gas i
• 刊名：Surface Science
• 出版年：1997
• 出版时间：January 10, 1997
• 年：1997
• 卷：370
• 期：2-3
• 页码：179-189
• 全文大小：1.15 M

文摘

The low-pressure (20 mbar) organometallic vapour-phase epitaxy (LP-OMVPE) of GaInP on non-planar {001} GaAs substrates has been examined. {k}A_k>h and {110} faceting features develop along the bottom corner and the top edge configurations of the inverted and dovetail grooves, respectively. At higher temperatures (T ≥ 720°C) these features are no longer present. The results have been compared to computer simulations of surface concentration profiles, whereby the inversely proportional relation between temperature and supersaturation, along with varying growth rate on adjacent surfaces of different crystallographic orientations, is found to be the driving force behind the occurrence of these features. The stability of the observed facets is related to the decrease in dangling-bond densities upon surface reconstruction.