Measurement of the transient junction temperature in MOSFET devices under operating conditions

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• 作者：D. Barlini ; M. Ciappa ; M. Mermet-Guyennet ; W. Fichtner
• 关键词：Adaptive search space ; Genetic algorithms ; Hysteresis identification ; Actuator hysteresis compensation
• 刊名：Microelectronics Reliability
• 出版年：2007
• 出版时间：September-November 2007
• 年：2007
• 卷：47
• 期：9-11
• 页码：1707-1712
• 全文大小：563 K

文摘

The capabilities of three techniques to measure the transient average junction temperature in power MOS devices based on the electrical thermo-sensitive parameters are assessed experimentally and by compact device simulation. The first two methods make use of the dependency of dI_ds/dt on the temperature, while the third one exploits the temperature dependency of the turn ON delay of the device.