文摘
We have carried out the de Haas–van Alphen (dHvA) experiment of an antiferromagnet CeRhIn5 under pressure. The detected dHvA branches αi (i=1,2,3) and β2 at ambient pressure are well explained by the corresponding dHvA branches in LaRhIn5, indicating that the f electron is localized at ambient pressure. At 2.9 GPa, where the antiferromagnetic ordering disappears completely, a new branch appears. This is approximately the same as that of 4f-itinerant Fermi surface in CeCoIn5, suggesting that the 4f electronic state is changed into an itinerant one.