The hydrostatic pressure and temperature effects on hydrogenic impurity binding energies in GaAs/InxGa1-xAs/GaAs square quantum well
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文摘

The impurity binding energy has a varying level of dependency to hydrostatic pressure depending on the wire radius values, it is stronger for intermediate wire radii (0.06aB-0.30aB) and weaker for larger or smaller wire radii.

Increasing temperature increases dielectric constant, while decreasing effective mass and potential height. However, the largest change occurs for dielectric constant and is about 2% for T = 0 and T = 300 K.

The ground state binding energy is very stable for a temperature range of 0–300 K.

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