Near band-edge luminescence of semi-insulating undoped gallium arsenide at high levels of excitation

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• 作者：V.F. Kovalenko ; S.V. Shutov ; Ye.A. Baganov ; M.M. Smyikalo
• 关键词：Semi-insulating undoped GaAs ; Near band-edge luminescence ; High level of excitation ; Electron– ; hole plasma
• 刊名：Journal of Luminescence
• 出版年：2009
• 出版时间：September 2009
• 年：2009
• 卷：129
• 期：9
• 页码：1029-1031
• 全文大小：253 K

文摘

The dependences of the maximum and the half-width of near band-edge photoluminescence of semi-insulating undoped-GaAs crystals at 77 K on the concentration of background acceptor impurities and the level of excitation in the range from 3×10²¹ to 6×10²² quantum/(cm² s) are investigated. The observed dependences are explained by formation of the density tails of states as a result of fluctuations of impurity concentration and participation of localized states of the donor impurity band in radiative transitions. Reduction of many-particle interaction at increasing of N can be connected with increasing of shielding of charge carriers by atoms of impurity.