Characterization of 6.1 </ce:hsp>Å III-V materials grown on GaAs and Si: A comparison of GaSb/GaAs epitaxy and GaSb/AlSb/Si epitaxy

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Characterization of 6.1 Å III-V materials grown on GaAs and Si: A comparison of GaSb/GaAs epitaxy and GaSb/AlSb/Si epitaxy

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作者：A.P. Craig^a ; ^{a.craig1@lancaster.ac.uk" class="auth_mail" title="E-mail the corresponding author} ; P.J. Carrington^b ; H. Liu^b ; A.R.J. Marshall^a
关键词：A1 Atomic force microscopy ; A1 Defects ; A1 High-resolution X-ray diffraction ; A1 Interfaces ; A3 Molecular beam epitaxy ; B1 Antimonides
刊名：Journal of Crystal Growth
出版年：2016
出版时间：1 February 2016
年：2016
卷：435
期：Complete
页码：56-61
全文大小：1951 K

文摘

•: GaSb p–i–n diodes were grown on Si and GaAs using interfacial misfit (IMF) arrays.
•: Transmission electron microscopy images revealed arrays of 90° misfit dislocations.
•: Threading dislocation densities of around a166dd8c475a8e7444b3c"> $10^{8} c m^{- 2}$ were found in each case.
•: Lower dark currents and higher quantum efficiency was found for growth on GaAs.

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