Electroluminescence from SiN_x layers doped with Ce^{3 +} ions

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• 作者：Tomas Grigaitis^a ; ^{tomas.grigaitis@ff.vu.lt} ; Arnas Naujokaitis^a ; ^b ; Vytautas Sabonis^a ; Kęstutis Arlauskas^a
• 关键词：Silicon nitride ; Plasma deposition ; Chemical vapor deposition ; Electroluminescence ; Sputtering
• 刊名：Thin Solid Films
• 出版年：2017
• 出版时间：31 January 2017
• 年：2017
• 卷：622
• 期：Complete
• 页码：142-147
• 全文大小：1268 K
• 卷排序：622

文摘

Cerium doped silicon nitride light emitting devices have been fabricated. The carrier transport is considered to be Poole-Frenkel thermionic emission. Electroluminescence peaks were attributed to the defects and the Ce3 + ions.