Analyzing hysteresis behavior of capacitance-voltage characteristics of IZO/C₆₀/pentacene/Au diodes with a hole-transport electron-blocking polyterpenol layer by electric-field-induced optical second-harmonic generation measurement

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• 作者：Dai Taguchi^a ; Takaaki Manaka^a ; Mitsumasa Iwamoto^a ; ^{iwamoto@pe.titech.ac.jp} ; Kateryna Bazaka^b ; Mohan V. Jacob^b
• 刊名：Chemical Physics Letters
• 出版年：2013
• 出版时间：30 May, 2013
• 年：2013
• 卷：572
• 期：Complete
• 页码：150-153
• 全文大小：355 K

文摘

By using electric-field-induced optical second-harmonic generation (EFISHG) measurement, we analyzed hysteresis behavior of capacitance-voltage (C-V) characteristics of IZO/polyterpenol (PT)/C₆₀/pentacene/Au diodes, where PT layer is actively working as a hole-transport electron-blocking layer. The EFISHG measurement verified the presence of interface accumulated charges in the diodes, and showed that a space charge electric field from accumulated excess electrons (holes) that remain at the PT/C₆₀ (C₆₀/pentacene) interface is responsible for the hysteresis loop observed in the C-V characteristics.