Resistive switching in graphene-organic device: Charge transport properties of graphene-organic device through electric field induced optical second harmonic generation and charge modulation spectroscopy

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• 作者：Mohan V. Jacob^a ; ^{Mohan.Jacob@jcu.edu.au} ; Dai Taguchi^b ; Mitsumasa Iwamoto^b ; Kateryna Bazaka^a ; ^c ; Rajdeep Singh Rawat^d
• 关键词：Graphene ; Resistive random access memory ; Plasma-enhanced chemical vapour deposition
• 刊名：Carbon
• 出版年：2017
• 出版时间：February 2017
• 年：2017
• 卷：112
• 期：Complete
• 页码：111-116
• 全文大小：1358 K
• 卷排序：112

文摘

Graphene-based resistive random access memory devices is a promising non-volatile memory technology that combines low operation voltage and power, extremely fast write/erase speeds, excellent reliability and storage capacity of RRAM with low-cost, large area and flexibility of carbon-based technologies. However, low-cost single-step synthesis of high-quality graphene remains a challenge. In this paper, high quality graphene synthesized directly from sustainable carbon source (M. alternifolia oil) was used as electrode and pentacene/C60 as active layers in carbon-based RRAM. I-V measurements were used to demonstrate reproducible switching (rapid increase in current) at certain voltage which was reversible. Charge transport and accumulation was visualized using electric field induced optical second harmonic generation and charge modulation spectroscopy. Hole transport from graphene layer to the organic layer was the primary cause of the observed switching behavior.