Bismuth iron oxide thin films using atomic layer deposition of alternating bismuth oxide and iron oxide layers

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Bismuth iron oxide thin films using atomic layer deposition of alternating bismuth oxide and iron oxide layers

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作者：Manjunath Puttaswamy^a ; Marko Vehkamä ; ki^a ; Kaupo Kukli^a ; ^b ; ^{kaupo.kukli@helsinki.fi" class="auth_mail" title="E-mail the corresponding author} ; Mukesh Chandra Dimri^c ; ¹ ; Marianna Kemell^a ; Timo Hatanpä ; ä ; ^a ; Mikko J. Heikkilä ; ^a ; Kenichiro Mizohata^d ; Raivo Stern^c ; Mikko Ritala^a ; Markku Leskelä ; ^a
关键词：Multiferroic ; Heterostructures ; Atomic layer deposition ; Ferromagnetic ; Ferroelectric
刊名：Thin Solid Films
出版年：2016
出版时间：29 July 2016
年：2016
卷：611
期：Complete
页码：78-87
全文大小：1403 K

文摘

•: Bismuth iron oxide thin films were grown by atomic layer deposition at 140 °C.
•: The major phase formed in the films upon annealing at 500 °C was BiFeO₃.
•: BiFeO₃ films and films containing excess Bi favored electrical charge polarization.
•: Slight excess of iron oxide enhanced saturative magnetization behavior.

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