Auger electron spectroscopy investigation of sputter induced altered layers in SiC by low energy sputter depth profiling and factor analysis

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• 作者：Kosiba ; R. ; Ecke ; G. ; Liday ; J. ; Breza ; J. ; Ambacher ; O.
• 关键词：79.20.R ; 61.80 ; 82.80.P ; Sputtering ; Altered layer ; AES ; Implantation ; Silicon carbide ; Factor analysis
• 刊名：Applied Surface Science
• 出版年：2003
• 出版时间：December 30, 2003
• 年：2003
• 卷：220
• 期：1-4
• 页码：304-312
• 全文大小：175 K

文摘

The thickness of the altered layer created by ion bombardment of the 6H–SiC single crystal was determined by means of Auger electron spectroscopy (AES) depth profiling in conjunction with factor analysis. After pre-bombardment of the surface by argon ions with energies 1, 2 and 4keV until the steady state, the depth profiles of the induced altered layers were recorded by sputtering with low energy argon ions of 300eV. Since the position and shape of the carbon Auger peak depend on the perfection of the crystalline structure, they were used for depth profile evaluation by factor analysis. In this way the depth profiles of the damaged surface region could be estimated in dependence on the ion energy. As a result, the thickness of the altered layer of SiC bombarded with 1, 2 and 4keV Ar ions using an incident angle of 80° as well as the corresponding argon implantation profile could be measured.