Observation of lateral band-bending in the edge vicinity of atomically-thin Bi insulating film formed on Si(111) surface

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Observation of lateral band-bending in the edge vicinity of atomically-thin Bi insulating film formed on Si(111) surface

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作者：Katsumi Nagaoka^a ; ; Takashi Uchihashi^a ; Tomonobu Nakayama^a ; ^b
关键词：Atomically-thin insulating film ; Lateral band-bending ; Domain edge ; Site-dependent LDOS measurement ; STM
刊名：Surface Science
出版年：2016
出版时间：February 2016
年：2016
卷：644
期：Complete
页码：41-45
全文大小：1323 K

文摘

•: LDOS around an edge of the atomically-thin Bi insulating film was measured by STM.
•: The valence band energy showed a parabolic behavior against the edge distance.
•: The LDOS in the edge vicinity is electrostatically modified by lateral band bending.
•: The lateral band bending is plausibly induced by charge accumulation near the edge.

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