Mechanism of rubrene thin film growth using α-quaterthiophene inducing layer at low temperature

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• 作者：Lijuan Wang^a ; ^{wlj15@163.com} ; Chuang Yan^a ; Liang Zhang^a ; Yang Sun^a ; Li Yin^a ; Lijing Sun^a ; Hao Du^a ; Xiaofeng Song^a ; Jidong Zhang^b ; Junliang Yang^c
• 关键词：Rubrene ; α-Quaterthiophene ; Growth inducing layer ; Growth mechanism ; Atomic force microscopy
• 刊名：Thin Solid Films
• 出版年：2017
• 出版时间：1 January 2017
• 年：2017
• 卷：621
• 期：Complete
• 页码：131-136
• 全文大小：1905 K
• 卷排序：621

文摘

Epitaxial rubrene films is deposited by α-quaterthiophene inducing layer on SiO2 substrates. The film grows at room temperature. Highly ordered rubrene thin film is obtained. Growth mechanism of rubrene thin film is investigated.