Modeling secondary electron images for linewidth measurement by critical dimension scanning electron microscopy

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• 作者：Mauro Ciappa ; Alex ; er Koschik ; Maurizio Dapor ; Wolfgang Fichtner
• 刊名：Microelectronics Reliability
• 出版年：2010
• 出版时间：September-November 2010
• 年：2010
• 卷：50
• 期：9-11
• 页码：1407-1412
• 全文大小：1065 K

文摘

Modeling of critical dimensions scanning electron microscopy with sub-nanometer uncertainty is required to provide a metrics and to avoid yield loss in the processing of advanced CMOS technologies. In this paper, a new approach is proposed, which includes a new Monte Carlo scheme, a new Monte Carlo code, as well as the coupling with electrostatic fields to take into account self-charging effects.