Emission kinetics of electron traps introduced in n-GaN during He-ion irradiation

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• 作者：Auret ; F.D. ; Goodman ; S.A. ; Legodi ; M.J. ; Meyer ; W.E.
• 关键词：71.55.E ; 61.82.F ; GaN ; He-ion ; Defects ; DLTS
• 刊名：Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms
• 出版年：1999
• 出版时间：January 2, 1999
• 年：1999
• 卷：148
• 期：1-4
• 页码：474-477
• 全文大小：102 K

文摘

We have employed deep level transient spectroscopy (DLTS) to study the electrical properties of 5.4-MeV He-ion irradiation induced electron traps, ER3–ER5, in epitaxially grown GaN. These main defects ER3–ER5, are positioned at E_C − 0.20 eV, E_C − 0.78 eV and E_C − 0.95 eV, respectively. Previous studies showed that electron emission from ER3 exhibited an electric field enhancement not characteristic of a Poole–Frenkel effect. Based on this and the true capture cross section of ER3, we suggest that ER3 is an acceptor-like defect.