Electrical and optical characteristics of the InAs/InAs_0.7Sb_0.1P_0.2 single heterojunction photodiodes for the spectral range 1.6-3.5 ¦Ìm

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• 作者：M. Ahmetoglu (Afrailov)^a ; ^{afrailov@uludag.edu.tr} ; I.A. Andreev^b ; E.V. Kunitsyna^b ; K.D. Moiseev^b ; M.P. Mikhailova^b ; Yu.P. Yakovlev^b
• 关键词：III&ndash ; V semiconductors ; Dark currents ; Spectral sensetivity ; Photodiode structures ; Liquid phase epitaxy (LPE)
• 刊名：Infrared Physics and Technology
• 出版年：2012
• 出版时间：January 2012
• 年：2012
• 卷：55
• 期：1
• 页码：15-18
• 全文大小：529 K

文摘

The electrical end optical characteristics of InAs/InAs_0.7Sb_0.1P_0.2 heterojunctions were studied. The dark current mechanisms in the heterostructures were investigated at several temperatures. The experimental results shows that, the low temperature region the tunneling mechanism of the current flow dominates in both, forward and reverse biases. At high temperatures region and in the range of voltage from 0.1 V to 1 V, the reverse current was defined by diffusion mechanism.