Growth of homogeneous InGaSb ternary alloy semiconductors on InSb seed

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• 作者：Noriaki Murakami ; Takuya Hikida ; Akiko Konno ; Kouji Arafune ; Tadanobu Koyama ; Yoshimi Momose ; Tetsuo Ozawa ; Masafumi Miyazawa ; Masashi Kumagawa ; Yasuhiro Hayakawa
• 关键词：A1. Mass transfer ; A2. Growth from solutions ; B1. Gallium compounds ; B2. Semiconducting III– ; V materials
• 刊名：Journal of Crystal Growth
• 出版年：2008
• 出版时间：April 2008
• 年：2008
• 卷：310
• 期：7-9
• 页码：1433-1437
• 全文大小：351 K

文摘

The paper describes the method to grow homogeneous In_xGa_1−xSb ternary alloy bulk crystals. The In_xGa_1−xSb crystals were grown under a constant temperature gradient using InSb(seed)/Te-doped InSb/GaSb(feed) samples. The optimum cooling rate to grow homogeneous crystal was given by the product of the temperature gradient and the growth rate. The temperature gradient was estimated from the indium composition profile in the grown crystal. The thermal pulses were applied during the holding process to estimate the growth rate. The respective growth rates were 0.45 and 0.19 mm/h for indium compositions of 0.8 and 0.6. The homogeneous In_0.8Ga_0.2Sb and In_0.6Ga_0.4Sb crystals were grown by decreasing the temperature with an optimized cooling rate of 0.77 and 0.33 °C/h, respectively.