Effective Schottky barrier lowering of Ni silicide/p-Si(100) using an ytterbium confinement structure for high performance n-type MOSFETs

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• 作者：Keng-Hui Shen^a ; Szu-Hung Chen^b ; Wei-Ting Liu^a ; Bao-Hsien Wu^a ; Lih-Juann Chen^a ; ^{ljchen@mx.nthu.edu.tw}
• 关键词：Schottky barrier ; nMOSFET ; NiSi ; Yb confinement
• 刊名：Materials & Design
• 出版年：2017
• 出版时间：15 January 2017
• 年：2017
• 卷：114
• 期：Complete
• 页码：220-225
• 全文大小：1250 K
• 卷排序：114

文摘

The insertion of Ti layer effectively suppresses Yb out-diffusion and prevents the Yb from oxidation during silicidation. Yb atoms are confined by the inserted Ti layer and react with both Ni and Si to form Yb-Ni silicide. The confinement leads the SBH of the system to a 0.02 and 0.025 eV lowering at 500 and 600 °C, respectively. The RE metal confinement structure provides a CMOS compatible approach for further SBH engineering and technology nodes.