Surface oxidation of CVT-grown CuAlSe₂

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• 作者：Kuroishi ; Naotaka ; Mochizuki ; Katsumi ; Kimoto ; Kazuhiko
• 关键词：CuAlSe₂ ; Surface state ; XPS analysis ; Oxidation of surface ; 81.65.Mq ; 82.80.Pv
• 刊名：Materials Letters
• 出版年：2003
• 出版时间：April, 2003
• 年：2003
• 卷：57
• 期：13-14
• 页码：1949-1954
• 全文大小：173 K

文摘

CuAlSe₂ single crystals grown by chemical vapor transport (CVT) were plate-like and transparent ones with yellowish color and well-developed (112) surface. It was found that light transmittance of the crystals decreased with passing days after growth. The surface state of grown crystals was examined in detail by XPS method to clarify the cause and the following results were obtained. Chemical shift of Cu due to CuO and CuSe bonds was clearly observed and this suggests that the surface is oxidized at room temperature in air. The oxidation of the surface stopped after about 2 weeks and the thickness was about 0.6–2.2 μm. It was found that Al, one of the constituent elements of the compound, was lacking near surface region due to high reactivity of the element.