Optimum top and bottom oxide thicknesses and flat-band voltages for improving subthreshold characteristics of 5 nm DGMOSFET

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• 作者：Hakkee Jung^a ; ^{hkjung@kunsan.ac.kr} ; Sima Dimitrijev^b
• 关键词：Subthreshold ; Threshold voltage ; DGMOSFET ; Tunneling current ; ΔVon&ndash ; off
• 刊名：Superlattices and Microstructures
• 出版年：2017
• 出版时间：January 2017
• 年：2017
• 卷：101
• 期：Complete
• 页码：285-292
• 全文大小：2505 K
• 卷排序：101

文摘

The subthreshold characteristics are degraded by tunneling current with reduction of channel length. The optimum design rules for flat-band voltages and oxide thicknesses are investigated for subthreshold characteristics. The conditions of Vfbt>VfbbVfbt>Vfbb and tox1>tox2tox1>tox2 for 5-nm DGMOSFET can simultaneously reduce the threshold voltage and ΔVon−offΔVon−off.