Hydrogenated amorphous carbon nitride with controlled hydrogen density — Structural analysis and electric field emission property

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• 作者：Haruhiko Ito ; Yukihisa Kogure ; Noriko Ito ; Satoshi Oki ; Hidetoshi Saitoh
• 关键词：Amorphous carbon nitride ; ECRCVD ; ZnO ; Al whisker ; Electric field emission
• 刊名：Surface and Coatings Technology
• 出版年：2008
• 出版时间：30 August 2008
• 年：2008
• 卷：202
• 期：22-23
• 页码：5370-5373
• 全文大小：431 K

文摘

Hydrogenated amorphous carbon nitride films that include presumably oxygen atoms were prepared by using the electron cyclotron resonance (ECR) plasma chemical vapor deposition (CVD) of mixed gases of He, BrCN, and H₂O. By controlling the partial pressure of H₂O, the relative number density of the hydrogen atoms was varied. The IR-band intensity analysis suggested that 7–22 % of N atoms were incorporated into CN terminations bonding to the aromatic rings and that the NH_y (y = 1 or 2) or OH terminations formed hydrogen bonds. The films were coated onto Al-doped ZnO (ZnO:Al) single crystal whiskers to manufacture cold cathode devices. The I–V characteristics of the devices were the Fowler–Nordheim type, and the work functions were determined to be 4.7 ± 0.4–1.9 ± 0.1 eV being dependent negatively on the partial pressure of H₂O.