Electron Microscopy Study on the Influence of B-implantation on Ni Induced Lateral Crystallization in Amorphous Si¹

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• 作者：N. Vouroutzis^a ; ^{nikosv@auth.gr" class="auth_mail" title="E-mail the corresponding author} ; G.Z. Radn&oacute ; czi^b ; E. Dodony^b ; G. Battistig^b ; J. Stoemenos^a ; B. Pé ; cz^b ; N. Frangis^a
• 关键词：Metal Induced Lateral Crystallization ; Boron implantation
• 刊名：Materials Today: Proceedings
• 出版年：2016
• 出版时间：2016
• 年：2016
• 卷：3
• 期：3
• 页码：825-831
• 全文大小：817 K

文摘

Nickel Metal Induced Lateral Crystallization (Ni-MILC) emerged as a viable technique for crystallization of a-Si films decreasing the crystallization temperature. Boron (B) implantation on a-Si films significantly enhances the crystallization rate of the Ni-MILC process. The structural characteristics of the implanted by Boron and subsequently crystallized by MILC a-Si films are studied by Transmission Electron Microscopy (TEM) and they are compared to intrinsic a-Si films which were deposited on top, as well as beside the boron implanted a-Si film. During the annealing, spontaneous nucleation occurs in the B-doped films far from the a-c interface, revealing a shorter incubation period in the B-doped films.