Structural changes in thin films of yttria-stabilized zirconia irradiated with uranium ions in the electronic stopping regime

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• 作者：A. Lamperti^a ; ^{alessio.lamperti@mdm.imm.cnr.it} ; G. Radn&oacute ; czi^b ; O. Geszti^b ; R. Birjega^c ; A.P. Caricato^d ; C. Trautmann^e ; P.M. Ossi^f
• 刊名：Journal of Nuclear Materials
• 出版年：2011
• 出版时间：1 September, 2011
• 年：2011
• 卷：416
• 期：1-2
• 页码：173-178
• 全文大小：1K

文摘

Poly-crystalline, partially monoclinic, yttria partially stabilized zirconia (Y-PSZ) was deposited on a 25 nm thick Au-covered (1 0 0) Si substrate by means of UV pulsed laser ablation. The 400 nm thick films were irradiated with single ionized swift heavy uranium (²³⁸U) ions of about 1300 MeV, applying ion fluences from 5 to 20 ¡Á 10¹¹ cm^?. The samples were characterized before and after irradiation using X-ray diffraction (XRD), micro-Raman spectroscopy, and transmission electron microscopy (TEM). With increasing ion fluence there is a progressive change from monoclinic to tetragonal/cubic polymorphs. TEM of selected samples indicates formation of Au islands on the Si substrate and the development of a defective microstructure under irradiation. The nature, distribution and aggregation of ion-beam induced defects are mainly associated with oxygen migration to the film surface and are probably responsible for the structure changes under irradiation.