Complex nanostructure of CoPc and F16CoPc were grown via PVD. The morphologies evolution process of nanostructures was clearly revealed. The CoPc and F16CoPc ribbons exhibited excellent field-effect performance. The hole and electron mobility for CoPc and F16CoPc-FET is 0.56 and 0.23 cm2 V−1 s−1 respectively.
NGLC 2004-2010.National Geological Library of China All Rights Reserved.
Add:29 Xueyuan Rd,Haidian District,Beijing,PRC. Mail Add: 8324 mailbox 100083
For exchange or info please contact us via email.