Raman spectroscopy of four epitaxial graphene layers: Macro-island grown on 4H-SiC substrate and an associated strain distribution

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• 作者：A. Ben Gouider Trabelsi ; A. Ouerghi ; O.E. Kusmartseva ; F.V. Kusmartsev ; M. Oueslati
• 关键词：Graphene ; Four layer-macro-island ; Raman spectroscopy ; Strain ; Gruneisen parameters
• 刊名：Thin Solid Films
• 出版年：2013
• 出版时间：31 July, 2013
• 年：2013
• 卷：539
• 期：Complete
• 页码：377-383
• 全文大小：916 K

文摘

Using Raman spectroscopy, we have characterised the optical and mechanical properties of a large macro-island area (150 ¦Ìm²) of four layer epitaxial graphene grown on a 4H-SiC substrate. Local Raman mapping showed an inhomogeneously stressed macro-island. There, the 2D and G Raman modes revealed a large frequency red-shift in this island with a decreasing temperature. An unexpected change appeared in the Raman spectra due to the inhomogeneous strain effect which was described in detail. Uniaxial and biaxial strains have been identified.