Chemical lift-off and direct wafer bonding of GaN/InGaN P-I-N structures grown on ZnO

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Chemical lift-off and direct wafer bonding of GaN/InGaN P-I-N structures grown on ZnO

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作者：K. Pantzas^a ; ^b ; ^{Konstantinos.pantzas@gatech.edu" class="auth_mail" title="E-mail the corresponding author} ; D.J. Rogers^c ; P. Bove^c ; V.E. Sandana^c ; F.H. Teherani^c ; Y. El Gmili^d ; M. Molinari^e ; G. Patriarche^b ; L. Largeau^d ; O. Mauguin^d ; S. Suresh^d ; P.L. Voss^a ; ^d ; M. Razeghi^f ; A. Ougazzaden^a ; ^b ; ^{Abdallah.ougazzaden@ece.gatech.edu" class="auth_mail" title="E-mail the corresponding author}
关键词：A1. Characterization ; A3. Metalorganic vapor phase epitaxy ; B1. Nitrides ; B1. Zinc compounds ; B3. Solar cells
刊名：Journal of Crystal Growth
出版年：2016
出版时间：1 February 2016
年：2016
卷：435
期：Complete
页码：105-109
全文大小：2031 K

文摘

•: MOCVD growth of a p-GaN/i-InGaN/n-GaN (PIN) solar cell on ZnO/Sapphire templates.
•: In-depth structural characterizations showing no back-etching of ZnO.
•: Chemical lift-off and wafer-bonding of the structure on float glass.
•: Structural characterizations of the device on glass.

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