A study on phase transformation of SnO_x thin films prepared by reactive magnetron sputtering

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• 作者：Li Guo ; Ming Zhao ; Daming Zhuang ; ^{dmzhuang@tsinghua.edu.cn" class="auth_mail" title="E-mail the corresponding author} ; Qianming Gong ; Hao Tan ; Mingjie Cao ; Liangqi Ouyang
• 关键词：P-type ; SnO ; SnO2 ; Thin film transistor
• 刊名：Materials Science in Semiconductor Processing
• 出版年：2016
• 出版时间：May 2016
• 年：2016
• 卷：46
• 期：Complete
• 页码：35-38
• 全文大小：1123 K

文摘

In the paper, SnO_x thin films were deposited by reactive magnetron sputtering from a tin target in O₂ containing working gas. The evolution from Sn-containing SnO to tetravalent SnO₂ films was investigated. The films could be classified into three groups according to their optical band gaps, which are E_g<2.5 eV, E_g=3.0–3.3 eV and E_g>3.7 eV. The electric measurements show that high conductivity can be obtained much easier in SnO₂ than in SnO films. A high electron mobility of 15.7 cm² V⁻¹ s⁻¹, a carrier concentration of 1.43×10²⁰ cm⁻³ and a resistivity of 2.8×10⁻³ Ω cm have been achieved in amorphous SnO₂ films. Films with the optical band gap of 3.0–3.3 eV remain amorphous though the substrate temperature is as high as 300 °C, which implies that °btaining high mobility in p-type SnO is more challenging in contrast to n-type SnO₂ films.