Structural and photoluminescent properties of a composite tantalum oxide and silicon nanocrystals embedded in a silicon oxide film

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• 作者：T. Dí ; az-Becerril ^{tomas.diaz.be@gmail.com} ; V. Herrera ; C. Morales ; G. Garcí ; a-Salgado ; E. Rosendo ; A. Coyopol ; ^{acoyopol@gmail.com} ; R. Galeazzi ; R. Romano ; F.G. Nieto-Caballero ; J. Sarmiento
• 关键词：Composites ; Tantalum oxide ; Silicon nanocrystals ; Silicon oxide
• 刊名：Journal of Luminescence
• 出版年：2017
• 出版时间：April 2017
• 年：2017
• 卷：184
• 期：Complete
• 页码：262-267
• 全文大小：1216 K
• 卷排序：184

文摘

Tantalum oxide crystals encrusted in a silicon oxide matrix were synthesized by using a hot filament chemical vapor deposition system (HFCVD). A solid source composed by a mixture in different percentages of Ta2O5 and silicon (Si) powders were used as reactants. The films were grown at 800 °C and 1000 °C under hydrogen ambient. The deposited films were characterized by X-ray photoelectron spectroscopy (XPS), high-resolution transmission electron microscopy (HRTEM) and photoluminescence (PL) at room temperature. From the XPS results it was confirmed the formation of a mixture of Tantalum oxide, silicon oxide and Si nanoparticles (Ta2O5-SiO2-Si(nc)) as seen from the Si (2p) and Ta (4f) lines corresponding to Si+ and Ta+ states respectively. Ta2O5 and Si nanocrystals (Si-NCs) embedded in the silicon oxide films were observed on HRTEM images which corroborate the XPS results. Finally the emission properties of the films exhibited a broad band from 400 to 850 nm caused by the independent PL properties of tantalum oxide and Si-NCs that compose the film. The intensity of the emissions was observed to be dependent on both temperature of deposition and the ratio Ta2O5/Si, used as initial reactants. Results from this work might supply useful data for the development of future light emitter devices.