Polysilicon film from aluminum-induced crystallization (AIC) of high P-doped a-Si.

High-P dopants form P precipitations and retard the out-diffusion of Si atoms.

P precipitations in P-doped AIC-Si suppress Si islands and voids.

P precipitations could enhance the crystallization rate and grain growth.

High P-doped AIC-Si increases the mobility due to reduced scattering and trap density.