Preparation of Cu2ZnSnS4 (CZTS) sputtering target and its application to the fabrication of CZTS thin-film solar cells
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文摘
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CZTS sputtering target was prepared by sintering CuS, ZnS and SnS2 powder mixture.

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Sintering at 600 °C for 8 h resulted in single-phase CZTS in 2-inch target.

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Sputtering followed by 570 °C/1-h sulfurization yielded Cu-poor/Zn-rich CZTS layer.

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Single-phase CZTS target sputtering yielded CZTS solar cell with 5.2% efficiency.

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