Modified MBE hardware and techniques and role of gallium purity for attainment of two dimensional electron gas mobility >35×10<sup>6</sup> </ce:hsp>cm<sup>2</sup>/V </ce:hsp>s in AlGaAs/GaAs quantum wells grown by MBE

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Modified MBE hardware and techniques and role of gallium purity for attainment of two dimensional electron gas mobility >35×10⁶ cm²/V s in AlGaAs/GaAs quantum wells grown by MBE

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作者：Geoffrey C. Gardner^a ; ^b ; Saeed Fallahi^a ; John D. Watson^a ; Michael J. Manfra^a ; ^b ; ^c ; ^{mmanfra@purdue.edu" class="auth_mail" title="E-mail the corresponding author}
关键词：A1. Electron mobility ; A3. Molecular beam epitaxy (MBE) ; A3. Quantum wells ; Gallium arsenide ; Two dimensional electron gas (2DEG)
刊名：Journal of Crystal Growth
出版年：2016
出版时间：1 May 2016
年：2016
卷：441
期：Complete
页码：71-77
全文大小：1629 K

文摘

•: Gallium purity currently limits mobility <40×106 cm²/V s in 2DEGs grown by MBE.
•: Gallium purity is enhanced by high temperature outgassing in an operating MBE.
•: 2DEG low temperature mobility in excess of 35×106 cm²/V s at density 3.0x1011/cm².
•: 2DEG low temperature mobility in excess of 18×106 cm²/V s at density 1.1x1011/cm².
•: We describe strategies to overcome purity limitations.

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