Design of a new two-dimensional diluted magnetic semiconductor: Mn-doped GaN monolayer

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• 作者：Qian Zhao^a ; ^b ; Zhihua Xiong^a ; ^{xiong_zhihua@126.com} ; Lan Luo^c ; Zhenhui Sun^a ; Zhenzhen Qin^d ; Lanli Chen^b ; Ning Wu^a
• 关键词：Mn-doped GaN monolayer ; Magnetic properties ; Electronic structure ; First-principle calculation
• 刊名：Applied Surface Science
• 出版年：2017
• 出版时间：28 February 2017
• 年：2017
• 卷：396
• 期：Complete
• 页码：480-483
• 全文大小：913 K
• 卷排序：396

文摘

It is found nonmagnetic GaN ML exhibits half-metallic FM behavior by Mn doping due to double exchange mechanism. Interestingly, the FM coupling is enhanced with the increasing tensile strain due to stronger interaction between Mn-3d and N-2p state. While, the FM interaction is weakened with the increasing compressive strain until it transforms into AFM under strain of −9.5%. These results provide a feasible approach for the fabrication of 2D DMS based GaN ML.