Differential Thermal Analysis and Crystal Growth of CdSiP₂

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• 作者：Yang Hui ; Zhu Shifu ; ^{sfzhu@scu.edu.cn" class="auth_mail" title="E-mail the corresponding author} ; Zhao Beijun ; He Zhiyu ; Chen Baojun ; Wu Shengling ; Wu Jingyao ; Sun Ning
• 关键词：CdSiP2 ; crystal growth ; characterizations ; differential thermal analysis
• 刊名：Rare Metal Materials and Engineering
• 出版年：2015
• 出版时间：November 2015
• 年：2015
• 卷：44
• 期：11
• 页码：2665-2669
• 全文大小：1184 K

文摘

Thermal properties of CdSiP₂ polycrystalline were studied by differential thermal analysis (DTA) technique with a quartz capillary column. It is found that the melting point and crystallization temperature of CdSiP₂ are 1139 and 1126 °C, respectively, and the supercooling degree of CdSiP₂ melt is evaluated to be 13 °C. According to the results of DTA, the structure of a furnace and the temperature profile of the crystal growth for CdSiP₂ were optimized. A crack-free CdSiP₂ crystal with 15 mm in diameter and 40 mm in length was grown by the modified vertical Bridgman (VB) method. The X-ray diffractionmeter (XRD), X-ray energy dispersive microanalysis (EDX) and infrared spectrophotometer (IR) were employed to characterize the properties of as-grown crystal. A new cleavage face of (112) was identified in XRD spectrum. The results of EDX indicate that the crystal is of good stoichiometry. The infrared transmission is up to 55% in the infrared region from 7000 to 1500 cm⁻¹. All the characterization results show that the obtained crystal is integrated in structure and good in optical quality which can be used in devices fabrication.