Velocity overshoot of electrons and holes in Si inversion layers

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• 作者：Sinitsky ; D. ; Assaderaghi ; F. ; Orshansky ; M. ; Bokor ; J. ; Hu ; C.
• 刊名：Solid-State Electronics
• 出版年：1997
• 出版时间：August, 1997
• 年：1997
• 卷：41
• 期：8
• 页码：1119-1125
• 全文大小：457 K

文摘

Velocity overshoot of inversion layer electrons and holes is studied experimentally and analytically in special test structures with nominally uniform electric field. The data were used to calibrate energy relaxation parameters in a commercial simulator MEDICI ver. 2.0. We propose an analytical model for velocity overshoot and show that it agrees well with experimental data. The amount of hole velocity overshoot is small.