Pure and N-doped nanocrystallie carbon films are synthesized by ICP assisted pulsed DC plasma process.

ICP power induces the increase in average graphitic crystallite size from 4.86 nm to 6.42 nm.

Beneficial role of ICP source assistance to achieve high sputtering throughput (deposition rate ∼55 nm/min).

Post-sterilization electron-transport study shows N-doped carbon films having promising stability.