Twenty-two percent efficiency HIT solar cell

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• 作者：Yasufumi Tsunomura ; Yukihiro Yoshimine ; Mikio Taguchi ; Toshiaki Baba ; Toshihiro Kinoshita ; Hiroshi Kanno ; Hitoshi Sakata ; Eiji Maruyama ; Makoto Tanaka
• 关键词：High-efficiency solar cells ; Heterojunction ; Crystalline silicon
• 刊名：Solar Energy Materials and Solar Cells
• 出版年：2009
• 出版时间：June 2009
• 年：2009
• 卷：93
• 期：6-7
• 页码：670-673
• 全文大小：319 K

文摘

We have achieved the world's highest solar cell conversion efficiency of 22.3 % (V_oc: 0.725 V, I_sc: 3.909 A, FF: 0.791, total area: 100.5 cm², confirmed by AIST) by using a heterojunction with intrinsic thin layer (HIT) structure. This is the world's first practical-size (>100 cm²) silicon solar cell that exceeds a conversion efficiency of 22 % as a confirmed value. This high efficiency has been achieved mainly due to improvements in a-Si:H/c-Si hetero-interface properties and optical confinement.

The excellent a-Si:H/c-Si hetero-interface of the HIT structure enables a high V_oc of over 0.720 V and results in better temperature properties. In order to reduce the power-generating cost, we are now investigating numerous technologies to further improve the conversion efficiency, especially the V_oc, of HIT solar cells, with the aim of achieving 23 % efficiency in the laboratory by 2010.