Influence of substrate temperature on the properties of (AlGa)₂O₃ thin films prepared by pulsed laser deposition

详细信息    查看全文

• 作者：Xu Wang ; Zhengwei Chen ; Fabi Zhang ; Katsuhiko Saito ; Tooru Tanaka ; Mitsuhiro Nishio ; Qixin Guo ; ^{guoq@cc.saga-u.ac.jp" class="auth_mail" title="E-mail the corresponding author}
• 关键词：(AlGa)2O3 thin films ; Pulsed laser deposition ; Crystal quality ; Raman spectroscopy
• 刊名：Ceramics International
• 出版年：2016
• 出版时间：15 August 2016
• 年：2016
• 卷：42
• 期：11
• 页码：12783-12788
• 全文大小：6478 K

文摘

(AlGa)₂O₃ thin films were deposited on (0001) sapphire substrates by pulsed laser deposition at different substrate temperatures. The influence of substrate temperature on surface morphology, optical properties, and crystal quality has been systematically investigated by atomic force microscope, transmission spectra, X-ray diffraction, and Raman spectroscopy. The results reveal that all the (AlGa)₂O₃ films have smooth surface and high transmittance. The (AlGa)₂O₃ film with the good crystal quality can be obtained at a substrate temperature of 400 °C. Our results provide an experimental basis for realizing the Ga₂O₃-based quantum well.