Formation of V_Zn-N_O acceptors with the assistance of tellurium in nitrogen-doped ZnO films

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• 作者：Kun Tang ; ^{ktang@nju.edu.cn} ; Shunming Zhu ; Zhonghua Xu ; Yang Shen ; Jiandong Ye ; Shulin Gu ; ^{slgu@nju.edu.cn}
• 关键词：Zinc oxide ; Shallow acceptor ; Tellurium and nitrogen co-doping ; Nitrogen complex
• 刊名：Journal of Alloys and Compounds
• 出版年：2017
• 出版时间：30 March 2017
• 年：2017
• 卷：699
• 期：Complete
• 页码：484-488
• 全文大小：1403 K
• 卷排序：699

文摘

This letter provides an approach for the intentional introduction of the VZn-NO complex. This letter provides a completed set of characterizations for identifying the VZn-NO complex. Tellurium at zinc site can form high-solubility ZnTeO alloy and can create stable complex TeZn-NO. ZnO film samples with hole as major carriers have been realized for a wide window of nitrogen doping concentration. This study opens a new path for the acceptor-isovalence p-type doping scheme.