Investigation of unusual shunting behavior due to phototransistor effect in n

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• 作者：Adeline Sugianto ; Budi S. Tjahjono ; Ly Mai ; Stuart R. Wenham
• 关键词：N-type silicon solar cells ; Aluminum-alloyed rear junction ; Laser doping ; Phototransistors ; Shunting effect ; Schottky contacts
• 刊名：Solar Energy Materials and Solar Cells
• 出版年：2009
• 出版时间：November 2009
• 年：2009
• 卷：93
• 期：11
• 页码：1986-1993
• 全文大小：738 K

文摘

N-type silicon wafers have been found to offer numerous advantages over p-type silicon wafers, such that they are becoming more widely used for manufacturing high-efficiency commercial solar cells. This paper focuses on work done on n-type cell structures with a screen-printed aluminum-alloyed rear junction, laser-doped selective emitter and light-induced plated front contacts to suit large-scale commercial production. However, with such a cell structure we report unusual linear shunting behavior that is only present under illumination but disappears under dark conditions. It was shown that such a phenomenon can be represented by a phototransistor model. In fact, such shunting effects are found to have detrimental impacts on the cell short-circuit current density (J_sc) and fill factor (FF), which limits the efficiency of cells in this work to 12 % .