TCT measurements with slim edge strip detectors

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• 作者：Igor Mandi膰^a ; ^{igor.mandic@ijs.si" class="auth_mail} ; Vladimir Cindro^a ; Andrej Gori&scaron ; ek^a ; Gregor Kramberger^a ; Marko Miku啪^a ; ^b ; Marko Zavrtanik^a ; Vitaliy Fadeyev^c ; Hartmut F.-W. Sadrozinski^c ; Marc Christophersen^d ; Bernard Phlips^d
• 关键词：Micro-strip silicon detectors ; Radiation hardness ; Edge-TCT ; Scribing ; Cleaving ; Passivation
• 刊名：Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment
• 出版年：1 July 2014
• 年：2014
• 卷：751
• 期：Complete
• 页码：41-47
• 全文大小：3067 K

文摘

Transient current technique (TCT) measurements with focused laser light on miniature silicon strip detectors (n⁺-type strips on p-type bulk) with one inactive edge thinned to about 100 µm using the Scribe-Cleave-Passivate (SCP) method are presented. Pulses of focused IR (位=1064 nm) laser light were directed to the surface of the detector and charge collection properties near the slim edge were investigated. Measurements before and after irradiation with reactor neutrons up to 1 MeV equivalent fluence of 1.5×10¹⁵ n_eq/cm² showed that SCP thinning of detector edge does not influence its charge collection properties.

TCT measurements were done also with focused red laser beam (位=640 nm) directed to the SCP processed side of the detector. The absorption length of red light in silicon is about 3 µm so with this measurement information about the electric field at the edge can be obtained. Observations of laser induced signals indicate that the electric field distribution along the depth of the detector at the detector edge is different than in the detector bulk: electric field is higher near the strip side and lower at the back side. This is a consequence of negative surface charge caused by passivation of the cleaved edge with Al₂O₃. The difference between bulk and edge electric field distributions gets smaller after irradiation.