Gate Drain Underlapped-PNIN-GAA-TFET for Comprehensively Upgraded Analog/RF Performance

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• 作者：Jaya Madan ^{jayamadan.2012@gmail.com} ; Rishu Chaujar ; ^{rishu.phy@dce.edu}
• 关键词：Band to band tunneling (BTBT) ; Source pocket ; Gate-drain underlapping (GDU) ; Parasitic capacitance ; Tunneling FET (TFET)
• 刊名：Superlattices and Microstructures
• 出版年：2017
• 出版时间：February 2017
• 年：2017
• 卷：102
• 期：Complete
• 页码：17-26
• 全文大小：2915 K
• 卷排序：102

文摘

Gate drain underlapped-PNIN-GAA-TFET has been proposed. The major impediments of TFET such as the inherent ambipolar behaviour, low ION and high threshold voltage are conquered. Improved analog and RF Figure of merits are acquired by integrating GDU and PNIN engineering schemes. Proposed device is suitable for low power and high-speed applications.