Investigation of CMP of Ni in the Preparation Process of Micro-Electro-Mechanical System Devices

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• 作者：Chu Xiangfeng ; Li Xiujin ; Dong Yongping ; Zhang Wangbing ; Bai Linshan
• 关键词：nickel ; chemical mechanical polish ; removal rate ; micro-electro-mechanical system
• 刊名：Rare Metal Materials and Engineering
• 出版年：2012
• 出版时间：April, 2012
• 年：2012
• 卷：41
• 期：4
• 页码：585-588
• 全文大小：476 K

文摘

CMP (chemical mechanical polish) experiments were carried out by using high purity nickel and home-made slurry. The effects of polishing down force, pH value, H₂O₂ concentration, chelating agent species and their concentration as well as particle concentration on the material removal rate (MRR) were investigated. The results reveal that MRR can reach 312.3 nm/min under the following conditions: the down force is 13.79 kPa, H₂O₂ concentration is 0.5 % (mass fraction), pH = 3.0, SiO₂ concentration is 0.5 % and EDTA concentration is 1 % , The better surface quality can be obtained under the following conditions: the down force is 13.79 kPa, H₂O₂ concentration is 1 % , pH = 4.0, SiO₂ concentration is 1 % , EDTA concentration is 1 % , and the surface roughness Ra can reach 5 nm.