The n-ZnO/n-In<sub>2</sub>O<sub>3</sub> heterojunction formed by a surface-modification and their potential barrier-control in methanal gas sensing

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The n-ZnO/n-In₂O₃ heterojunction formed by a surface-modification and their potential barrier-control in methanal gas sensing

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作者：Longtao Ma^aAuthor Vitae ; Huiqing Fan^a ; ^{hqfan3@163.com" class="auth_mail" title="E-mail the corresponding author}Author Vitae ; Hailin Tian^aAuthor Vitae ; Jiawen Fang^aAuthor Vitae ; Xuezhu Qian^bAuthor Vitae
关键词：ZnO-modified In2O3 ; Sonochemical synthesis ; Electron transfer modulation ; Heterostructure ; HCHO detecting
刊名：Sensors & Actuators: B. Chemical
出版年：2016
出版时间：January 2016
年：2016
卷：222
期：Complete
页码：508-516
全文大小：3338 K

文摘

•: ZnO/In₂O₃ heterojunction was synthesized by a cost-efficient two-stage route.
•: Sonochemical synthesis promoted ZnO uniformly attach to the surface of In₂O₃.
•: Potential barrier in ZnO–In₂O₃ interface controlled electron transfer in gas-sensing.
•: ZnO-modified In₂O₃ showed superior sensing performance and low detection limit.

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