Impact of rapid thermal annealing on structural and electrical properties of ZnO thin films grown atomic layer deposition on GaAs substrates

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• 作者：Yuan Zhang ; Hong-Liang Lu ; Yang Geng ; Qing-Qing Sun ; Shi-Jin Ding ; David Wei Zhang
• 关键词：ALD ; ZnO ; GaAs ; RTA
• 刊名：Vacuum
• 出版年：May, 2014
• 年：2014
• 卷：103
• 期：Complete
• 页码：1-4
• 全文大小：1327 K

文摘

The effect of rapid thermal annealing temperature on the structural and electrical properties thin ZnO films grown on GaAs substrate by atomic layer deposition is thoroughly investigated. X-ray diffraction analysis show that atoms interdiffusion can be observed at the interface of ZnO/GaAs heterostructures after annealing in oxygen ambience at elevated temperatures. Moreover, the conductivity of ZnO film converts from n- to p-type after annealing at 600聽掳C. A hole concentration as high as 3.4聽脳聽10²⁰聽cm^鈭? is also obtained for the sample annealed at 650聽掳C. The p-type conductivity of ZnO films is attributed to arsenic atoms diffusion into ZnO films as shallow acceptors.