文摘
(GeTe2)(1鈥?i>x)(Sb2Te3)x (GST) layers were deposited via atomic layer deposition (ALD) at growth temperatures ranging from 50 to 120 掳C using Ge(OCH3)4 or Ge(OC2H5)4, Sb(OC2H5)3, and [(CH3)3Si]2Te as the metal鈥搊rganic precursors of the Ge, Sb, and Te elements, respectively. The GST layers with compositions lying on the GeTe2鈥揝b2Te3 tie lines could be obtained by varying the ratio of the Ge鈥揟e and Sb鈥揟e ALD cycles. Although the incorporation of an Sb鈥揟e layer into the GST film occurred in a genuine ALD manner, that of the Ge鈥揟e layer was governed by the kinetically limited physisorption of Ge precursors. The incorporation behavior of the Ge precursor with different ligands was explained by the adsorption and desorption kinetics based on the Brunauer鈥揈mmett鈥揟eller isotherm. The ALD-like film growth behavior could be well-explained by the kinetically limited incorporation of Ge atoms.