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GaN as an Interfacial Passivation Layer: Tuning Band Offset and Removing Fermi Level Pinning for III鈥揤 MOS Devices
详细信息
查看全文
作者:
Zhaofu Zhang
;
Ruyue Cao
;
Changhong
Wang
;
Hao-Bo Li
;
Hong Dong
;
Wei-hua Wang
;
Feng Lu
;
Yahui Cheng
;
Xinjian Xie
;
Hui
Liu
;
Kyeongjae Cho
;
Robert Wallace
;
Weichao Wang
刊名:ACS Applied Materials & Interfaces
出版年:2015
出版时间:March 11, 2015
年:2015
卷:7
期:9
页码:5141-5149
全文大小:553K
ISSN:1944-8252
文摘
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