Increased Carrier Mobility and Lifetime in CdSe Quantum Dot Thin Films through Surface Trap Passivation and Doping

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• 作者：Daniel B. Straus ; E. D. Goodwin ; E. Ashley Gaulding ; Shin Muramoto ; Christopher B. Murray ; Cherie R. Kagan
• 刊名：The Journal of Physical Chemistry Letters
• 出版年：2015
• 出版时间：November 19, 2015
• 年：2015
• 卷：6
• 期：22
• 页码：4605-4609
• 全文大小：348K
• ISSN：1948-7185

文摘

Passivating surface defects and controlling the carrier concentration and mobility in quantum dot (QD) thin films is prerequisite to designing electronic and optoelectronic devices. We investigate the effect of introducing indium in CdSe QD thin films on the dark mobility and the photogenerated carrier mobility and lifetime using field-effect transistor (FET) and time-resolved microwave conductivity (TRMC) measurements. We evaporate indium films ranging from 1 to 11 nm in thickness on top of approximately 40 nm thick thiocyanate-capped CdSe QD thin films and anneal the QD films at 300 掳C to densify and drive diffusion of indium through the films. As the amount of indium increases, the FET and TRMC mobilities and the TRMC lifetime increase. The increase in mobility and lifetime is consistent with increased indium passivating midgap and band-tail trap states and doping the films, shifting the Fermi energy closer to and into the conduction band.